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Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

机译：使用金属有机气相沉积/原子层沉积混合系统原位制造的包含al2O3栅极氧化物和alN钝化层的Gaas金属氧化物半导体结构的电特性

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Takeshi Aoki; Noboru Fukuhara; Takenori Osada; Hiroyuki Sazawa; Masahiko Hata; Takayuki Inoue;
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1. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system [J] . Takeshi Aoki, Noboru Fukuhara, Takenori Osada, AIP Advances . 2015,第8期

机译：使用金属-有机气相沉积/原子层沉积混合系统原位制造的包括Al2O3栅氧化物和AlN钝化层的GaAs金属-氧化物-半导体结构的电性能
2. High-performance GaAs-based metal-oxide-semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al_2O_3 gate oxide and in situ AlN passivation by metalorganic chemical vapor deposition [J] . Takeshi Aoki, Noboru Fukuhara, Takenori Osada, _Applied Physics Express . 2014,第10期

机译：高性能GaAs基金属氧化物半导体异质结构场效应晶体管，原子层沉积Al_2O_3栅氧化物并通过有机金属化学气相沉积原位钝化AlN
3. Nitride passivation reduces interfacial traps in atomic-layer-deposited Al_2O_3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition [J] . T. Aoki, N. Fukuhara, T. Osada, Applied Physics Letters . 2014,第3期

机译：氮化物钝化使用大气金属有机化学气相沉积减少了原子层沉积的Al_2O_3 / GaAs（001）金属氧化物半导体电容器中的界面陷阱
4. Study on indium phosphide nanowires grown by metal organic chemical vapor deposition and coated with aluminum oxides deposited by atomic layer deposition [C] . Andrew J. Lohn, David Fryauf, Junce Zhang, Nanoepitaxy: Materials and devices IV. . 2012

机译：金属有机化学气相沉积生长并原子层沉积沉积氧化铝包覆的磷化铟纳米线的研究
5. Metal organic chemical vapor deposition and atomic layer deposition of strontium oxide films on silicon surfaces. [D] . Cuadra, Amalia C. 2007

机译：在硅表面上的氧化锶膜的金属有机化学气相沉积和原子层沉积。
6. Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance [O] . Wipakorn Jevasuwan, Yuji Urabe, Tatsuro Maeda, 2012

机译：InGaAs上Al2O3原子层沉积的初始过程：界面形成机理及其对金属-绝缘体-半导体器件性能的影响
7. TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer [O] . Dennis Lin, B Xin-ping Qu, Yu-long Jiang, 2016

机译：采用GeOxNy钝化层的锗基金属氧化物半导体器件原子层沉积生长的TiO2 / HfO2双层栅堆叠
8. Atomic Layer Epitaxy of III-V Compound Semiconductors by Thermal and Laser-Assisted Metalorganic Chemical Vapor Deposition [R] . DenBaars, S. P. 1989

机译：通过热和激光辅助金属有机化学气相沉积的III-V化合物半导体的原子层外延

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

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